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VS-GT100TS065N

Part number VS-GT100TS065N
Product classification IGBT Modules
Manufacturer Vishay General Semiconductor – Diodes Division
Description MODULES IGBT - IAP IGBT
Encapsulation
Packing Box
Quantity 12
RoHS status YES
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Total number

Quantity

Price

Total price

1

$50.3860

$50.3860

15

$45.6610

$684.9150

105

$40.9360

$4,298.2800

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Product parameters
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TYPEDESCRIPTION
MfrVishay General Semiconductor – Diodes Division
Series-
PackageBox
Product StatusACTIVE
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationHalf Bridge Inverter
Operating Temperature-40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 100A
NTC ThermistorNo
Supplier Device PackageINT-A-PAK IGBT
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)96 A
Voltage - Collector Emitter Breakdown (Max)650 V
Power - Max259 W
Current - Collector Cutoff (Max)50 µA

Roving Networks (Microchip Technology)
MEMS OSC XO 133.0000MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 24.5760MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 100.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSC XO 125.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSCILLATOR, ULTRA LOW POWER
Roving Networks (Microchip Technology)
MEMS OSC XO 133.3330MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 175.0000MHZ LVDS SMD
Roving Networks (Microchip Technology)
MEMS OSC LOW JITTER 125MHZ LVDS
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