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NXH100T120L3Q0S1NG

Part number NXH100T120L3Q0S1NG
Product classification IGBT Modules
Manufacturer Sanyo Semiconductor/onsemi
Description 1200V GEN III Q0PACK WITH NI-PLA
Encapsulation
Packing Tray
Quantity 24
RoHS status YES
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Total number

Quantity

Price

Total price

1

$42.3990

$42.3990

24

$38.5490

$925.1760

48

$37.2610

$1,788.5280

96

$34.6920

$3,330.4320

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Product parameters
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TYPEDESCRIPTION
MfrSanyo Semiconductor/onsemi
Series-
PackageTray
Product StatusACTIVE
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationThree Level Inverter
Operating Temperature-40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 75A
NTC ThermistorYes
Supplier Device Package18-PIM/Q0PACK (55x32.5)
Current - Collector (Ic) (Max)54 A
Voltage - Collector Emitter Breakdown (Max)650 V
Power - Max122 W
Current - Collector Cutoff (Max)200 µA
Input Capacitance (Cies) @ Vce4877 pF @ 25 V

Roving Networks (Microchip Technology)
MEMS OSC XO 133.0000MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 24.5760MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 100.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSC XO 125.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSCILLATOR, ULTRA LOW POWER
Roving Networks (Microchip Technology)
MEMS OSC XO 133.3330MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 175.0000MHZ LVDS SMD
Roving Networks (Microchip Technology)
MEMS OSC LOW JITTER 125MHZ LVDS
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