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BY25Q128ESSIG(T)

Part number BY25Q128ESSIG(T)
Product classification Memory
Manufacturer BYTe Semiconductor
Description 128 MBIT, 3.0V (2.7V TO 3.6V), -
Encapsulation
Packing Tube
Quantity 9500
RoHS status YES
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Inventory:
Total number

Quantity

Price

Total price

1

$1.0010

$1.0010

10

$0.8960

$8.9600

95

$0.7000

$66.5000

285

$0.6510

$185.5350

570

$0.5740

$327.1800

1045

$0.4550

$475.4750

2565

$0.4270

$1,095.2550

5035

$0.4060

$2,044.2100

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Product parameters
PDF(1)
TYPEDESCRIPTION
MfrBYTe Semiconductor
Series-
PackageTube
Product StatusACTIVE
Package / Case8-SOIC (0.209", 5.30mm Width)
Mounting TypeSurface Mount
Memory Size128Mbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NOR (SLC)
Clock Frequency120 MHz
Memory FormatFLASH
Supplier Device Package8-SOP
Write Cycle Time - Word, Page60µs, 2.4ms
Memory InterfaceSPI - Quad I/O
Access Time7.5 ns
Memory Organization16M x 8

Roving Networks (Microchip Technology)
MEMS OSC XO 133.0000MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 24.5760MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 100.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSC XO 125.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSCILLATOR, ULTRA LOW POWER
Roving Networks (Microchip Technology)
MEMS OSC XO 133.3330MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 175.0000MHZ LVDS SMD
Roving Networks (Microchip Technology)
MEMS OSC LOW JITTER 125MHZ LVDS
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